NE722S01

Mounting Style : SMD/SMT
Drain Source Voltage VDS : 5 V
Gain : 12 dB
Gate-Source Breakdown Voltage : - 5 V
Power Dissipation : 250 mW
Continuous Drain Current : 120 mA
Maximum Operating Temperature : + 125 C
Frequency : 4 GHz
Package / Case : SO-1
Technology Type : MESFET
Noise Figure : 0.9 dB
Forward Transconductance gFS (Max / Min) : 45 mS


Features:

• HIGH POWER GAIN: G_S = 6 dB TYP at f = 12 GHz
• OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz
• LOW NOISE/HIGH GAIN: N_F = 0.9 dB TYP, G_a = 12 dB TYP at f = 4 GHz
• GATE LENGTH: L_G = 0.8 µm (recessed gate)
• GATE WIDTH: W_G = 400 µm


Application

• C to X band low noise amplifiers
• C to X band oscillators


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VDS	Drain to Supply Voltage	V	5.0
VGS	Gate to Drain Voltage	V	-5.0
VGS	Gate to Source Voltage	V	-6.0
IDS	Drain Current	mA	IDSS
PIN	Input Power	mW	40
PT	Total Power Dissipation	mW	250
TCH	Channel Temperature	°C	125
TSTG	Storage Temperature	°C	-65 to +125

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.


Description

NEC's NE722S01 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band. The device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for improved RF and DC performance and uniformity. This NE722S01's low phase noise and high fT makes it a excellent choice for oscillator applications on a digital LNB (Low Noise Block).
The NE722S01 is housed in a low cost plastic package which is available in Tape and Reel. NEC's stringent qualityassurance and test procedures ensure the highest reliability performance.