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NE894M13

Transistors RF Bipolar Small Signal NPN Low Volt Osc

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SeekIC No. : 00219024 Detail

NE894M13: Transistors RF Bipolar Small Signal NPN Low Volt Osc

NE894M13 Data Sheet

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Part Number:
NE894M13
Mfg:
NEC/CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single    

Description

Transistor Polarity :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging :
Configuration : Single


Features:

• NEW MINIATURE M13 PACKAGE:
  Small transistor outline
  1.0 X 0.5 X 0.5 mm
  Low profile / 0.50 mm package height
  Flat lead style for better RF performance
• IDEAL FOR > 3 GHz OSCILLATORS
• LOW NOISE, HIGH GAIN
• LOW Cre
• UHSO 25 GHz PROCESS


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V

9

VCBO
Collector to Base Voltage
V
3.0
VEBO
Emitter to Base Voltage
V
1.5
IC
Collector Current
mA
35
PT2
Total Power Dissipation
mW
105
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. With device mounted on 1.08 cm2 X 1.0 mm glass epoxy board.


Description

The NE894M13 transistor is designed for oscillator applications above 3 GHz. The NE894M13 features low voltage, low
current operation, low noise, and high gain. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications.




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