Transistors RF Bipolar Small Signal NPN Low Volt Osc
NE894M13: Transistors RF Bipolar Small Signal NPN Low Volt Osc
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| Configuration : | Single |
|
SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
|
VCEO |
Collector to Emitter Voltage |
V |
9 |
|
VCBO |
Collector to Base Voltage |
V |
3.0 |
|
VEBO |
Emitter to Base Voltage |
V |
1.5 |
|
IC |
Collector Current |
mA |
35 |
|
PT2 |
Total Power Dissipation |
mW |
105 |
|
Tj |
Junction Temperature |
°C |
150 |
|
TSTG |
Storage Temperature |
°C |
-65 to +150 |
The NE894M13 transistor is designed for oscillator applications above 3 GHz. The NE894M13 features low voltage, low
current operation, low noise, and high gain. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications.