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Part Number: NE894M13

 

 

 

 

Description: The NE894M13 transistor is designed for oscillator applications above 3 GHz. The NE894M13 features low...


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NE894M13 General Description


The NE894M13 transistor is designed for oscillator applications above 3 GHz. The NE894M13 features low voltage, low
current operation, low noise, and high gain. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications.

NE894M13 Maximum Ratings

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V

9

VCBO
Collector to Base Voltage
V
3.0
VEBO
Emitter to Base Voltage
V
1.5
IC
Collector Current
mA
35
PT2
Total Power Dissipation
mW
105
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. With device mounted on 1.08 cm2 X 1.0 mm glass epoxy board.

NE894M13 Features

• NEW MINIATURE M13 PACKAGE:
  Small transistor outline
  1.0 X 0.5 X 0.5 mm
  Low profile / 0.50 mm package height
  Flat lead style for better RF performance
• IDEAL FOR > 3 GHz OSCILLATORS
• LOW NOISE, HIGH GAIN
• LOW Cre
• UHSO 25 GHz PROCESS

NE894M13 datasheet

NE894M13
PDF/DataSheet Download

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