NE97733

Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Maximum Operating Temperature :
Packaging :
Configuration : Single
Package / Case : SOT-23
Transistor Polarity : PNP
Power Dissipation : 0.2 W
Emitter- Base Voltage VEBO : - 3 V
Continuous Collector Current : - 0.05 A


Features:

• HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP
• HIGH SPEED SWITCHING CHARACTERISTICS
• NPN COMPLIMENT AVAILABLE: NE68133
• HIGH INSERTION POWER GAIN: |S21E|² = 12 dB at 1 GHz


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCEO	Collector to Emitter Voltage	V	-20
VCBO	Collector to Base Voltage	V	-12
VEBO	Emitter to Base Voltage	V	-3
IC	Collector Current	mA	-50
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-55 to +150

Note:
1. Operation in excess of any one of these parameters may resultin permanent damage.


Description

The NE97733 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97733 offers excellent performance and reliability at low cost.