Position: Home  > All Categories> Integrated Circuits (ICs) > NEL2012F03-24

NEL2012F03-24

Features: · igh Linear Power and Gain· ow Internal Modulation Distortion· igh Reliability Gold Metalization· mitter Ballasting· 4 V OperationApplication· igital Cellular : PCN/PCS etc.· igital Cordless : PHS etc.Specifications PARAMETER SYMBOL SPECIFIED CONDITION RATINGS UNIT C...

product image

NEL2012F03-24 Picture
See larger image
SeekIC No. : 004433513 Detail

NEL2012F03-24: Features: · igh Linear Power and Gain· ow Internal Modulation Distortion· igh Reliability Gold Metalization· mitter Ballasting· 4 V OperationApplication· igital Cellular : PCN/PCS etc.· igital Cordl...

NEL2012F03-24 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
NEL2012F03-24
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/29

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· igh Linear Power and Gain
· ow Internal Modulation Distortion
· igh Reliability Gold Metalization
· mitter Ballasting
· 4 V Operation


Application

· igital Cellular : PCN/PCS etc.
· igital Cordless : PHS etc.


Specifications

PARAMETER
SYMBOL
SPECIFIED CONDITION
RATINGS
UNIT
Collector to Base Voltage
VCBO
45
V
Collector to Emitter Voltage
VCER
R = 10
30
V
Emitter to Base Voltage
VEBO
3
V
Collector to Emitter Voltage
VCEO
18
V
Collector Current
IC
4
A
Power Dissipation
PT
41.5
W
Thermal Resistance
Rth(j-c)
4.2
°C/W
Junction Temperature
Tj
200
°C
Storage Temperature
Tstg
65 to 150
°C



Description

The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ HS base station applications. NEL2012F03-24 is corporate emitter ballast resistors, gold metalizations and offers a high degree of eliability.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Audio Products
HUC1002
WM-64CT
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Optical Inspection Equipment
AA924
A21K4B
View more