NESG2021M05

Emitter- Base Voltage VEBO :
Continuous Collector Current :
Packaging :
Mounting Style : SMD/SMT
Power Dissipation : 175 mW
Package / Case : M05


Features:

• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY V_CEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE: N_F = 0.9 dB at 2 GHz N_F = 1.3 dB at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN: M_SG = 22.5 dB at 2 GHz
• LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance
• Pb Free


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCEO	Collector to Emitter Voltage	V	13.0
VCBO	Collector to Base Voltage	V	5.0
VEBO	Emitter to Base Voltage	V	1.5
IC	Collector Current	mA	35
PT2	Total Power Dissipation	mW	175
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to +150

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB.


Description

NEC's NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators.

NECʼs low profile, flat lead style M05 Package of NESG2021M05 provides high frequency performance for compact wireless designs.