Transistors RF Silicon Germanium NPN SiGe High Freq
NESG2101M05-A: Transistors RF Silicon Germanium NPN SiGe High Freq
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| Emitter- Base Voltage VEBO : | 1.5 V | Continuous Collector Current : | 35 mA |
| Power Dissipation : | 175 mW | Mounting Style : | SMD/SMT |
| Package / Case : | SOT-343 |
| Technical/Catalog Information | NESG2101M05-A |
| Vendor | NEC |
| Category | Discrete Semiconductor Products |
| Frequency - Transition | 17GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.2dB @ 2GHz |
| Current - Collector (Ic) (Max) | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 15mA, 2V |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| Gain | 19dB |
| Power - Max | 500mW |
| Compression Point (P1dB) | - |
| Package / Case | M05 |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NESG2101M05 A NESG2101M05A |