Transistors RF Silicon Germanium NPN Amp/Oscillator
NESG210719-T1-A: Transistors RF Silicon Germanium NPN Amp/Oscillator
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Power Dissipation : | 0.2 W | Packaging : | Reel |
Technical/Catalog Information | NESG210719-T1-A |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Frequency - Transition | 12GHz |
Noise Figure (dB Typ @ f) | 0.9dB ~ 1.5dB @ 2GHz |
Current - Collector (Ic) (Max) | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 5mA, 1V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5V |
Gain | 6.5dB ~ 8dB |
Power - Max | 200mW |
Compression Point (P1dB) | - |
Package / Case | SC-90 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NESG210719 T1 A NESG210719T1A |