Transistors RF Silicon Germanium NPN SiGe High Freq
NESG3031M05-A: Transistors RF Silicon Germanium NPN SiGe High Freq
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| Emitter- Base Voltage VEBO : | 1.5 V | Continuous Collector Current : | 35 mA |
| Power Dissipation : | 175 mW | Mounting Style : | SMD/SMT |
| Package / Case : | SOT-343 |
| Technical/Catalog Information | NESG3031M05-A |
| Vendor | NEC |
| Category | Discrete Semiconductor Products |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | 0.6dB ~ 0.95dB @ 2.4GHz ~ 5.2GHz |
| Current - Collector (Ic) (Max) | 35mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 6mA, 2V |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 4.3V |
| Gain | 16dB |
| Power - Max | 150mW |
| Compression Point (P1dB) | 13dBm |
| Package / Case | M05 |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NESG3031M05 A NESG3031M05A |