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NESG3031M05

Transistors RF Silicon Germanium RO 551-NESG3031M05-A

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NESG3031M05: Transistors RF Silicon Germanium RO 551-NESG3031M05-A

NESG3031M05 Data Sheet

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Part Number:
NESG3031M05
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Mounting Style : SMD/SMT Package / Case : M05    

Description

Emitter- Base Voltage VEBO :
Continuous Collector Current :
Power Dissipation :
Packaging :
Mounting Style : SMD/SMT
Package / Case : M05


Features:

• LOW NOISE FIGURE AND HIGH-GAIN NF= 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF= 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
• MAXIMUM STABLE POWER GAIN: MSG= 14.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
• SiGe HBT TECHNOLOGY: USH3 process, fmax = 110 GHz
• M05 PACKAGE: Flat-lead 4 pin thin-type super minimold package


Specifications

Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
12.0
V
Collector to Emitter Voltage
VCEO
4.3
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IG
35
mA
Total Power Dissipation
PtotNote
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-65 to +150
°C
Note Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB


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