Transistors RF Silicon Germanium Low Noise, SiGe: C HBT 2V,6mA@5.8GHz
NESG4030M14-A: Transistors RF Silicon Germanium Low Noise, SiGe: C HBT 2V,6mA@5.8GHz
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| Continuous Collector Current : | 35 mA | Power Dissipation : | 105 mW |
| Mounting Style : | SMD/SMT |