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Part Number: NEZ1414-8E

 

 

 

 

Description: The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high...


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NEZ1414-8E General Description


The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The device incorporates a WSi (tungsten silicide) gate structure for high reliability.

NEZ1414-8E Maximum Ratings

CHARACTERISTIC
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGS
-7
V
Gate to Drain Voltage
VGD
10
V
Drain Current
IGF
+80
A
Gate Current
IGR
80
mA
Total Power Dissipation
PT
60
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
65 to +175
°C

NEZ1414-8E Features

• High Output Power : Po (1 dB) = +39.5 dBm typ.
• High Linear Gain : 6.5 dB typ.
• High Efficiency : 25 % typ.
• Input and Output Internally Matched for Optimum performance

NEZ1414-8E datasheet

NEZ1414-8E
PDF/DataSheet Download

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