IGBT Transistors 20A 400V Ignition N-Channel
NGB8202NT4G: IGBT Transistors 20A 400V Ignition N-Channel
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| Collector- Emitter Voltage VCEO Max : | 440 V | Maximum Gate Emitter Voltage : | 15 V | ||
| Continuous Collector Current at 25 C : | 20 A | Gate-Emitter Leakage Current : | 350 uA | ||
| Power Dissipation : | 150 W | Maximum Operating Temperature : | + 175 C | ||
| Package / Case : | TO-263-3 | Packaging : | Reel |
| Technical/Catalog Information | NGB8202NT4G |
| Vendor | ON Semiconductor |
| Category | Undefined Category |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NGB8202NT4G NGB8202NT4G NGB8202NT4GOSTR ND NGB8202NT4GOSTRND NGB8202NT4GOSTR |