NJD2873T4

Transistors Bipolar (BJT) 2A 50V 12.5W NPN

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SeekIC No. : 00213355 Detail

NJD2873T4: Transistors Bipolar (BJT) 2A 50V 12.5W NPN

floor Price/Ceiling Price

Part Number:
NJD2873T4
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 120 at 0.5 A at 2 V Configuration : Single
Maximum Operating Frequency : 65 MHz (Min) Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT Package / Case : DPAK
Packaging : Reel    

Description

Transistor Polarity : NPN
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Collector- Emitter Voltage VCEO Max : 50 V
Package / Case : DPAK
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 2 A
Maximum Operating Temperature : + 175 C
DC Collector/Base Gain hfe Min : 120 at 0.5 A at 2 V
Maximum Operating Frequency : 65 MHz (Min)


Features:

• Pb−Free Package is Available
• High DC Current Gain − hFE = 120 (Min) @ IC = 500 mA = 40 (Min) @ IC = 2 A
• Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A
• High Current−Gain − Bandwidth Product − fT = 65 MHz (Min) @ IC = 100 mA
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C >400 V



Specifications

Rating
Symbol
Value
Unit
Collector−Base Voltage
VCB
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Emitter−Base Voltage
VEB
5
Vdc
Collector Current                             Continuous Peak
IC

2

3

Adc
Base Current
IB
0.4
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
12.5
0.1
W
W/°C
Total Device Dissipation @ TA = 25°C*
Derate above 25°C
PD
1.4
0.011
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−65 to
+150
°C



Parameters:

Technical/Catalog InformationNJD2873T4
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)2A
Power - Max15W
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic300mV @ 50mA, 1A
Frequency - Transition65MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
PackagingTape & Reel (TR)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NJD2873T4
NJD2873T4



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