NJL3281D

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 15 A
Maximum Operating Frequency : 30 MHz (Min)
DC Collector/Base Gain hfe Min : 75
Collector- Emitter Voltage VCEO Max : 260 V
Package / Case : TO-264


Features:

• Thermally Matched Bias Diode
• Instant Thermal Bias Tracking
• Absolute Thermal Integrity
• High Safe Operating Area


Application

• High−End Consumer Audio Products
 Home Amplifiers
Home Receivers
• Professional Audio Amplifiers
 Theater and Stadium Sound Systems
Public Address Systems (PAs)


Specifications

Rating	Symbol	Value	Unit
Collector−Emitter Voltage	VCEO	230	Vdc
Collector−Base Voltage	VCBO	230	Vdc
Emitter−Base Voltage	VEBO	5	Vdc
Collector−Emitter Voltage − 1.5 V	VCEX	230	Vdc
Collector Current − Continuous − Peak (Note 1)	IC	15 25	Adc
Base Current − Continuous	IB	1.5	Adc
Total Power Dissipation @ TC = 25°C Derate Above 25°C	PD	200 1.43	W W/°C
Operating and Storage Junction Temperature Range	TJ, Tstg	− 65 to +150	°C
DC Blocking Voltage	VR	200	V
Average Rectified Forward Current	IF(AV)	1.0	A

Parameters:

Technical/Catalog Information	NJL3281D
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	260V
Current - Collector (Ic) (Max)	15A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	75 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic	3V @ 1A, 10A
Frequency - Transition	30MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-264
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Non-Compliant
Other Names	NJL3281D NJL3281D NJL3281DOS ND NJL3281DOSND NJL3281DOS