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NLAS1053

Features: • High Speed: tPD = 1 ns (Typ) at VCC = 5.0 V• Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C• High Bandwidth, Improved Linearity, and Low RDSON• INH Pin Allows a Both Channels 'OFF' Condition (With a High)• RDSON @ 25 W , Performance Very Similar to t...

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SeekIC No. : 004434741 Detail

NLAS1053: Features: • High Speed: tPD = 1 ns (Typ) at VCC = 5.0 V• Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C• High Bandwidth, Improved Linearity, and Low RDSON• INH Pin Allo...

NLAS1053 Data Sheet

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Part Number:
NLAS1053
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High Speed: tPD = 1 ns (Typ) at VCC = 5.0 V
• Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C
• High Bandwidth, Improved Linearity, and Low RDSON
• INH Pin Allows a Both Channels 'OFF' Condition (With a High)
• RDSON @ 25 W , Performance Very Similar to the NLAS4053
• Break Before Make Circuitry, Prevents Inadvertent Shorts
• Useful For Switching Video Frequencies Beyond 50 MHz
• LatchUp Performance Exceeds 300 mA
• ESD Performance: HBM > 2000 V; MM > 200 V, CDM > 1500 V
• Tiny US8 Package, Only 2.1 X 3.0 mm


Pinout

Connection Diagram


Specifications

Symbol Parameter Value Unit
VCC DC Supply Voltage -0.5 to +7.0 V
VI DC Input Voltage −0.5 Vis + 7.0 V
VO DC Output Voltage Output in Higher or Low State (Note 1) −0.5 Vis + 0.5 V
IIK DC Input Diode Current VI < GND -50 mA
IOK DC Output Diode Current VO = GND
VO = VCC		 -50

 mA
IOU DC Output Sink Current ±50 mA
ICC DC Supply Current per Supply Pin ±100 mA
IGND DC Ground Current per Ground Pin ±100 mA
TSTG Storage Temperature Range -65 to +150 °C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
TJ Junction Temperature Under Bias +150 °C
JA Thermal Resistance SOT- 353 (Note 1)
SOT- 553		 250 °C/W
PD Power Dissipation in Still Air at 85°C 250 mW
MSL Moisture Sensitivity Level 1  
FR Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 @ 0.125 in  
VESD ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)		 > 2000
200
N/A		 V
ILatchUp LatchUp Performance Above VCC and Below GND at 85C (Note 5) ±300 mA

Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolutemaximumrated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions.
1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow.
2. Tested to EIA/JESD22A114A.
3. Tested to EIA/JESD22A115A.
4. Tested to JESD22C101A.
5. Tested to EIA/JESD78.




Description

The NLAS1053 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. NLAS1053 achieves very high speed propagation delays and low ON resistances while maintaining CMOS low power dissipationNLAS1053  consists of a single 2:1 Mux/Demux (SPDT), similar to ON Semiconductor's NLAS4053 analog and digital voltages that may vary across the full power supply range (from VCC to GND).

The inhibit and select input pins have over voltage protection of NLAS1053 that allows voltages above VCC up to 7.0 V to be present without damage or disruption of operation of the part, regardless of the operating voltage.




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