NP15P06SLG-E1-AY, US $ .25-.25, NP15P06SLG-E1-AY DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003430284 Detail

NP15P06SLG-E1-AY: MOSFET P-CH -60V MP-3ZK/TO-252

NP15P06SLG-E1-AY Data Sheet

US $ .25~.25 / Piece | Get Latest Price

Part Number:: NP15P06SLG-E1-AY
Mfg:
Supply Ability:: 5000

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0~2500

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$.25

Processing time
15 Days

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Upload time: 2026/2/26

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Product Details

Quick Details

Series:	-	Manufacturer:	Renesas Electronics America
FET Type:	MOSFET P-Channel, Metal Oxide	Transistor Type:	-
Current - Collector (Ic) (Max):	-	FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	60V	Continuous Drain Current :	15 A
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	15A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	70 mOhm @ 7.5A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	2.5V @ 250µA	Gate Charge (Qg) @ Vgs:	23nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	1100pF @ 10V
Power - Max:	1.2W	Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63	Supplier Device Package:	TO-252 (MP-3ZK)

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) @ Vgs: 23nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 15A
Power - Max: 1.2W
Manufacturer: Renesas Electronics America
Supplier Device Package: TO-252 (MP-3ZK)
Input Capacitance (Ciss) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 70 mOhm @ 7.5A, 10V

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NP15P06SLG-E1-AY

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