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NP34N055IHE

Features: • Channel temperature 175 degree rated• Super low on-state resistance RDS(on) = 19 m MAX. (VGS = 10 V, ID = 17 A)• Low Ciss : Ciss = 1600 pF TYP.• Built-in gate protection diodeSpecifications Drain to Source Voltage VDSS 55 V Gate to Source Voltage VGS...

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NP34N055IHE: Features: • Channel temperature 175 degree rated• Super low on-state resistance RDS(on) = 19 m MAX. (VGS = 10 V, ID = 17 A)• Low Ciss : Ciss = 1600 pF TYP.• Built-in gate pro...

NP34N055IHE Data Sheet

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Part Number:
NP34N055IHE
Supply Ability:
5000

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Product Details

Description



Features:

• Channel temperature 175 degree rated
• Super low on-state resistance RDS(on) = 19 m MAX. (VGS = 10 V, ID = 17 A)
• Low Ciss : Ciss = 1600 pF TYP.
• Built-in gate protection diode


Specifications

Drain to Source Voltage VDSS 55 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±34 A
Drain Current (Pulse) Note1 ID(pulse) ±136 A
Total Power Dissipation (TA = 25 °C) PT 1.2 W
Total Power Dissipation (TC = 25 °C) PT 88 W
Single Avalanche Current Note2 IAS 34 / 27 / 10 A
Single Avalanche Energy Note2 EAS 11 / 72 / 100 mJ
Channel Temperature Tch 175 °C
Storage Temperature Tstg 55 to + 175 °C
Notes 1. PW 10 s, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V (see Figure 4.)


Description

These products NP34N055IHE are N-Channel MOS Field Effect Transistors designed for high current switching applications.


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