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NP80N06MLG-S18-AY

MOSFET N-CH 60V 80A TO-220

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SeekIC No. : 003432885 Detail

NP80N06MLG-S18-AY: MOSFET N-CH 60V 80A TO-220

NP80N06MLG-S18-AY Data Sheet

floor Price/Ceiling Price

US $ .58~1.39 / Piece | Get Latest Price
Part Number:
NP80N06MLG-S18-AY
Mfg:
Supply Ability:
5000

Price Break

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  • 10~25
  • 25~100
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  • 2500~5000
  • Unit Price
  • $1.39
  • $1.26
  • $1.12
  • $1.01
  • $.9
  • $.78
  • $.65
  • $.61
  • $.58
  • Processing time
  • 15 Days
  • 15 Days
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  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 80A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 40A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) @ Vgs: 128nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 6900pF @ 25V
Power - Max: 1.8W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220-3    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 1.8W
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Manufacturer: Renesas Electronics America
Input Capacitance (Ciss) @ Vds: 6900pF @ 25V
Current - Continuous Drain (Id) @ 25° C: 80A
Gate Charge (Qg) @ Vgs: 128nC @ 10V
Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 40A, 10V


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