NP82N04MDG-S18-AY

MOSFET N-CH TO-220

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SeekIC No. : 003431465 Detail

NP82N04MDG-S18-AY: MOSFET N-CH TO-220

floor Price/Ceiling Price

US $ .58~1.37 / Piece | Get Latest Price
Part Number:
NP82N04MDG-S18-AY
Mfg:
Supply Ability:
5000

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  • Unit Price
  • $1.37
  • $1.24
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  • $.58
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/13

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 82A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 41A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) @ Vgs: 150nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 9000pF @ 25V
Power - Max: 1.8W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220-3    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Gate Charge (Qg) @ Vgs: 150nC @ 10V
Supplier Device Package: TO-220-3
Manufacturer: Renesas Electronics America
Current - Continuous Drain (Id) @ 25° C: 82A
Input Capacitance (Ciss) @ Vds: 9000pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 41A, 10V


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