NSS30100LT1G, US $ .19-.36 , ON Semiconductor, NSS30100LT1G DataSheet download, circuit diagram from SeekIC.com

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NSS30100LT1G: Transistors Bipolar (BJT) 2A 30V Low VCEsat

NSS30100LT1G Data Sheet

US $ .19~.36 / Piece | Get Latest Price

Part Number:: NSS30100LT1G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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25~100
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$.27
$.21
$.19

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Upload time: 2024/4/22

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What is this?

NSS30101LT1G evaluate
US $.19 - .36 / Piece

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US $.18 - .36 / Piece

Transistors Bipolar (BJT) 2A 30V Low VCEsat
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US $.15 - .32 / Piece

Transistors Bipolar (BJT) 2A 35V Low VCEsat

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	30 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	1 A
DC Collector/Base Gain hfe Min :	100 at 1 mA at 2 V	Configuration :	Single
Maximum Operating Frequency :	100 MHz (Min)	Maximum Operating Temperature :	+ 150 C
Mounting Style :	SMD/SMT	Package / Case :	SOT-23
Packaging :	Reel

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 5 V
Package / Case : SOT-23
Maximum Operating Frequency : 100 MHz (Min)
Maximum DC Collector Current : 1 A
Collector- Emitter Voltage VCEO Max : 30 V
DC Collector/Base Gain hfe Min : 100 at 1 mA at 2 V

Parameters:

Technical/Catalog Information	NSS30100LT1G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	1A
Power - Max	710mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 2V
Vce Saturation (Max) @ Ib, Ic	650mV @ 200mA, 2A
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	100nA
Mounting Type	Surface Mount
Package / Case	*
Packaging	Cut Tape (CT)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NSS30100LT1G NSS30100LT1G NSS30100LT1GOSCT ND NSS30100LT1GOSCTND NSS30100LT1GOSCT

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NSS30100LT1G

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