NSS60600MZ4T1G

Transistors Bipolar (BJT) LO V PNP TRANSISTOR 60V 6.0A

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NSS60600MZ4T1G: Transistors Bipolar (BJT) LO V PNP TRANSISTOR 60V 6.0A

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US $ .13~.35 / Piece | Get Latest Price
Part Number:
NSS60600MZ4T1G
Mfg:
ON Semiconductor
Supply Ability:
5000

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 6 A
DC Collector/Base Gain hfe Min : 150 Configuration : Single Dual Collector
Maximum Operating Frequency : 100 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-223
Packaging : Reel    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 6 V
Collector- Emitter Voltage VCEO Max : 60 V
DC Collector/Base Gain hfe Min : 150
Package / Case : SOT-223
Maximum Operating Frequency : 100 MHz (Min)
Maximum DC Collector Current : 6 A
Configuration : Single Dual Collector


Pinout

  Connection Diagram


Specifications

Rating Symbol Max Unit
CollectorEmitter Voltage VCEO -60 Vdc
CollectorBase Voltage VCBO -100 Vdc
EmitterBase Voltage VEBO -6.0 Vdc
Collector Current - Continuous IC -6.0 A
Collector Current - Peak ICM -12.0 A



Description

ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors NSS60600MZ4T1G are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

NSS60600MZ4T1G's Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players.Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
 
•This is a Pb-Free Device


Parameters:

Technical/Catalog InformationNSS60600MZ4T1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)6A
Power - Max2W
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1A, 2V
Vce Saturation (Max) @ Ib, Ic350mV @ 600mA, 6A
Frequency - Transition100MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NSS60600MZ4T1G
NSS60600MZ4T1G
NSS60600MZ4T1GOSTR ND
NSS60600MZ4T1GOSTRND
NSS60600MZ4T1GOSTR



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