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NSVB123JPDXV6T1G

TRANS NPN/PNP DUAL 50V SOT563

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SeekIC No. : 003435894 Detail

NSVB123JPDXV6T1G: TRANS NPN/PNP DUAL 50V SOT563

NSVB123JPDXV6T1G Data Sheet

floor Price/Ceiling Price

US $ .06~.06 / Piece | Get Latest Price
Part Number:
NSVB123JPDXV6T1G
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~8000
  • Unit Price
  • $.06
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: ON Semiconductor
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k
Breakdown Voltage : 22.8 V Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA Frequency - Transition: -
Power - Max: 500mW Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563    

Description

Series: -
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: -
Mounting Type: Surface Mount
Resistor - Base (R1) (Ohms): 2.2k
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Current - Collector Cutoff (Max): 500nA
Resistor - Emitter Base (R2) (Ohms): 4.7k
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Supplier Device Package: SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Manufacturer: ON Semiconductor
Power - Max: 500mW


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