NTA4001NT1G

MOSFET 20V 238mA N-Channel

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NTA4001NT1G: MOSFET 20V 238mA N-Channel

floor Price/Ceiling Price

US $ .04~.14 / Piece | Get Latest Price
Part Number:
NTA4001NT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 100~500
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 0.238 A
Resistance Drain-Source RDS (on) : 3000 mOhms at 4.5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-416 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 10 V
Package / Case : SOT-416
Continuous Drain Current : 0.238 A
Resistance Drain-Source RDS (on) : 3000 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTA4001NT1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C238mA
Rds On (Max) @ Id, Vgs3 Ohm @ 10mA, 4.5V
Input Capacitance (Ciss) @ Vds 20pF @ 5V
Power - Max300mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs-
Package / CaseSC-75-3, SOT-416, EMT3
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTA4001NT1G
NTA4001NT1G
NTA4001NT1GOSCT ND
NTA4001NT1GOSCTND
NTA4001NT1GOSCT



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