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NTB30N20T4G

MOSFET 200V 30A N-Channel

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SeekIC No. : 00162249 Detail

NTB30N20T4G: MOSFET 200V 30A N-Channel

NTB30N20T4G Data Sheet

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Part Number:
NTB30N20T4G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 81 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 81 mOhms


Parameters:

Technical/Catalog InformationNTB30N20T4G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs81 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 2335pF @ 25V
Power - Max2W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs100nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTB30N20T4G
NTB30N20T4G
NTB30N20T4GOSDKR ND
NTB30N20T4GOSDKRND
NTB30N20T4GOSDKR



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