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NTB4302

MOSFET 30V 74A N-Channel

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SeekIC No. : 00164954 Detail

NTB4302: MOSFET 30V 74A N-Channel

NTB4302 Data Sheet

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Part Number:
NTB4302
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 74 A
Resistance Drain-Source RDS (on) : 0.0093 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 74 A
Resistance Drain-Source RDS (on) : 0.0093 Ohms


Features:

• Low RDS(on)
• Higher Efficiency Extending Battery Life
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• IDSS Specified at Elevated Temperature


Application

• DC−DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery Powered Products: Ie:
   Computers, Printers, Cellular and Cordless Telephones, and PCMCIA Cards


Pinout

Connection Diagram


Specifications

Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
Vdc
Drain−to−Gate Voltage (RGS = 10 M)
VDGR
30
Vdc
Gate−to−Source Voltage − Continuous
VGS
±20
Vdc
Drain Current
− Continuous @ TC = 25
− Continuous @ TC = 100
− Single Pulse (tp10 s)

ID
ID
IDM

74
47
175
Adc

Apk
Total Power Dissipation @ TC = 25
Derate above 25
PD
80
0.66
W
W/
Operating and Storage Temperature Range
TJ, Tstg
−55 to +150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25
(VDD = 30 Vdc, VGS = 10 Vdc, L = 5.0 mH
IL(pk) = 17 A, VDS = 30 Vdc, RG = 25 )
EAS
722
mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)

RJC
RJA
1.55
70
/W
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds
TL
260
1. When surface mounted to an FR4 Board using minimum recommended Pad Size, (Cu Area 0.412 in2).
2. Current limited by internal lead wires.


Parameters:

Technical/Catalog InformationNTB4302
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C74A
Rds On (Max) @ Id, Vgs9.3 mOhm @ 37A, 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 24V
Power - Max80W
PackagingTube
Gate Charge (Qg) @ Vgs28nC @ 4.5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTB4302
NTB4302



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