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MFG:ON  Package Cooled:04+  D/C:263  

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Part Number: NTB75N03R

 

MFG: ON

Package Cooled: 04+

D/C: 263

 

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NTB75N03R Maximum Ratings

Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
25
Vdc
Gate−to−Source Voltage − Continuous
VGS
±20
Vdc
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25
Drain Current
− Continuous @ TC = 25
− Single Pulse (tp10 s)
RJC
PD

ID
IDM
1.68
74.4

75
225
/W
W

A
A
Thermal Resistance − Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25
Drain Current − Continuous @ TA = 25
RJA
PD
ID
60
2.08
12.6
/W
W
A
Thermal Resistance − Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25
Drain Current − Continuous @ TA = 25
RJA
PD
ID
100
1.25
9.7
/W
W
A
Operating and Storage Temperature Range
TJ, Tstg
−55 to +150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25
(VDD = 30 Vdc, VGS = 10 Vdc, IL = 12 Apk,
L = 1 mH, RG = 25)
EAS
71.7
mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 10 seconds
TL
260
1. When surface mounted to an FR4 board using 1 inch pad size,(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2).

NTB75N03R Features

• Planar HD3e Process for Fast Switching Performance
• Low RDS(on) to Minimize Conduction Loss
• Low Ciss to Minimize Driver Loss
• Low Gate Charge

NTB75N03R Connection Diagram

NTB75N03R Connection Diagram

NTB75N03R datasheet

NTB75N03R
PDF/DataSheet Download

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