NTD20N03L27

MOSFET 30V 20A N-Channel

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NTD20N03L27 Picture
SeekIC No. : 00165032 Detail

NTD20N03L27: MOSFET 30V 20A N-Channel

floor Price/Ceiling Price

Part Number:
NTD20N03L27
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 27 mOhms at 5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : DPAK
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 27 mOhms at 5 V


Features:

• Pb−Free Packages are Available
• Ultra−Low RDS(on), Single Base, Advanced Technology
• SPICE Parameters Available
• Diode is Characterized for use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperatures
• High Avalanche Energy Specified
• ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0



Application

• Power Supplies
• Inductive Loads
• PWM Motor Controls
• Replaces MTD20N03L in many Applications



Pinout

  Connection Diagram


Specifications

Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
Vdc
Drain−to−Gate Voltage (RGS = 1.0 M)
VDGR
30
Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp10 ms)
VGS
VGS
±20
±24
Vdc
Drain Current
− Continuous @ TC = 25
− Continuous @ TC = 100
− Single Pulse (tp10 s)

ID
ID
IDM


20
16
60
Adc

Apk
Total Power Dissipation @ TC = 25
Derate above 25
Total Power Dissipation @ TC = 25 (Note 1)
PD
70
0.6
1.75
W
W/
W
Operating and Storage Temperature Range
TJ, Tstg
−55 to +150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25
(VDD = 30 Vdc, VGS = 5 Vdc, L = 1.0 mH
IL(pk) = 24 A, VDS = 34 Vdc)
EAS
288
mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)

RJC
RJA
RJA

1.67
100
71.4
/W
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 10 seconds
TL
260

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not  normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using the minimum recommended pad size and repetitive rating; pulse width limited by maximum junction temperature.



Description

This logic level vertical power MOSFET NTD20N03L27 is a general purpose part that provides the "best of design" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode of NTD20N03L27 has a ideal fast but soft recovery.




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