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NTD3055L170-1G

MOSFET 60V 9A N-Channel

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SeekIC No. : 00162815 Detail

NTD3055L170-1G: MOSFET 60V 9A N-Channel

NTD3055L170-1G Data Sheet

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Part Number:
NTD3055L170-1G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 170 mOhms at 5 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 9 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 170 mOhms at 5 V


Parameters:

Technical/Catalog InformationNTD3055L170-1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs170 mOhm @ 4.5A, 5V
Input Capacitance (Ciss) @ Vds 275pF @ 25V
Power - Max1.5W
PackagingTube
Gate Charge (Qg) @ Vgs10nC @ 5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTD3055L170 1G
NTD3055L1701G



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