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NTD50N03R

MOSFET 30V 68A N-Channel

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SeekIC No. : 00165318 Detail

NTD50N03R: MOSFET 30V 68A N-Channel

NTD50N03R Data Sheet

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Part Number:
NTD50N03R
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 9.2 A
Resistance Drain-Source RDS (on) : 14 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Continuous Drain Current : 9.2 A
Resistance Drain-Source RDS (on) : 14 mOhms


Features:

• Planar Technology
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Pb−Free Packages are Available


Application

• VCORE DC−DC Buck Converter Applications
• Optimized for High Side Switching


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 25 V
Gate−to−Source Voltage VGS 20 V
Continuous Drain
Current (RJA)
(Note 1)		 Steady
State		 TA = 25°C ID 9.2 A
TA = 85°C 7.2
Power Dissipation
(RJA) (Note 1)		 TA = 25°C PD 2.1 W
Continuous Drain
Current (RJA)
(Note 2)		 TA = 25°C ID 7.8 A
TA = 85°C 6.0
Power Dissipation
(RJA)
(Note 2)		 TA = 25°C PD 1.5 W
Continuous Drain
Current (RJC)
(Note 1)		 TC = 25°C ID 45 A
TC = 85°C 35
Power Dissipation
(RJC) (Note 1)		 TC = 25°C PD 50 W
Pulsed Drain Current TA = 25°C,
tp = 10 s		 IDM 180 A
Current Limited by
Package		 TA = 25°C IDmaxPkg 45 A
Operating Junction and Storage
Temperature		 TJ, Tstg −55 to 175 °C
Source Current (Body Diode) IS 45 A
Drain−to−Source (dv/dt) dv/dt 8.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 6.32 Apk, L = 1.0 mH, RG = 25 )		 EAS 20 mJ
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)		 TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.


Parameters:

Technical/Catalog InformationNTD50N03R
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C7.8A
Rds On (Max) @ Id, Vgs12 mOhm @ 30A, 11.5V
Input Capacitance (Ciss) @ Vds 750pF @ 12V
Power - Max1.5W
PackagingTube
Gate Charge (Qg) @ Vgs15nC @ 11.5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTD50N03R
NTD50N03R



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