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NTD60N02R

MOSFET 25V 62A N-Channel

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SeekIC No. : 00164617 Detail

NTD60N02R: MOSFET 25V 62A N-Channel

NTD60N02R Data Sheet

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Part Number:
NTD60N02R
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 10.5 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 10.5 mOhms


Features:

• Planar HD3e Process for Fast Switching Performance
• Low RDS(on) to Minimize Conduction Loss
• Low Ciss to Minimize Driver Loss
• Low Gate Charge
• Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters
• Pb−Free Packages are Available


Specifications

Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 24 Vdc
Gate−to−Source Voltage − Continuous VDGR ±20 Vdc
Thermal Resistance
− Junction−to−Case
Total Power Dissipation @ TC = 25°C
Continuous Drain Current @ TC = 25°C (Note 4)
Continuous Drain Current @ TC = 100°C		 RJC
PD
ID
ID		 2.6
58
62
50
32		 °C/W
W
A
A
A
Thermal Resistance
− Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 100°C
Pulsed Drain Current (Note 3)		 RJA
PD
ID		 80
1.87
10.5		 C/W
W
A
Thermal Resistance
− Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 100°C
Pulsed Drain Current (Note 3)		 RJA
PD
ID		 80
1.87
10.5		 C/W
W
A
Thermal Resistance
− Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 100°C
Pulsed Drain Current (Note 3)		 TJ,Tstg −55 to175
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 17 Apk, L = 5.0 mH, RG = 25 W)		 EAS 60 mJ
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds TL 260

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 in sq drain pad size.
2. When surface mounted to an FR4 board using the minimum recommended pad size.




Parameters:

Technical/Catalog InformationNTD60N02R
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C8.5A
Rds On (Max) @ Id, Vgs10.5 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 1330pF @ 20V
Power - Max1.25W
PackagingTube
Gate Charge (Qg) @ Vgs14nC @ 4.5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTD60N02R
NTD60N02R



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