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NTD80N02-1G

MOSFET NFET DPAK 24V 80A 60mOhm

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SeekIC No. : 00161367 Detail

NTD80N02-1G: MOSFET NFET DPAK 24V 80A 60mOhm

NTD80N02-1G Data Sheet

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Part Number:
NTD80N02-1G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 24 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 5.8 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 5.8 mOhms
Drain-Source Breakdown Voltage : 24 V


Parameters:

Technical/Catalog InformationNTD80N02-1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs5.8 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 2600pF @ 20V
Power - Max75W
PackagingTube
Gate Charge (Qg) @ Vgs42nC @ 4.5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTD80N02 1G
NTD80N021G
NTD80N02 1GOS ND
NTD80N021GOSND
NTD80N02-1GOS



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