NTE4151PT1G

MOSFET -20V -760mA P-Channel

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SeekIC No. : 00150204 Detail

NTE4151PT1G: MOSFET -20V -760mA P-Channel

floor Price/Ceiling Price

US $ .08~.27 / Piece | Get Latest Price
Part Number:
NTE4151PT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.27
  • $.16
  • $.13
  • $.08
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/15

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 6 V Continuous Drain Current : 0.76 A
Resistance Drain-Source RDS (on) : 360 mOhms at 4.5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-89 Packaging : Reel    

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 6 V
Continuous Drain Current : 0.76 A
Resistance Drain-Source RDS (on) : 360 mOhms at 4.5 V
Package / Case : SC-89


Parameters:

Technical/Catalog InformationNTE4151PT1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C760mA
Rds On (Max) @ Id, Vgs360 mOhm @ 350mA, 4.5V
Input Capacitance (Ciss) @ Vds 156pF @ 5V
Power - Max313mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs2.1nC @ 4.5V
Package / CaseSC-89-3
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTE4151PT1G
NTE4151PT1G
NTE4151PT1GOSDKR ND
NTE4151PT1GOSDKRND
NTE4151PT1GOSDKR



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