MOSFET POWER MOSFET 20V 5.6A SNGL CH
NTGS3130NT1G: MOSFET POWER MOSFET 20V 5.6A SNGL CH
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 5.6 A | ||
Resistance Drain-Source RDS (on) : | 24 mOhms at 4.5 V | Configuration : | Single Quad Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TSOP | Packaging : | Reel |
Technical/Catalog Information | NTGS3130NT1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 4.2A |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 5.6A, 4.5A |
Input Capacitance (Ciss) @ Vds | 935pF @ 16V |
Power - Max | 600mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 20.3nC @ 4.5V |
Package / Case | 6-TSOP |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTGS3130NT1G NTGS3130NT1G NTGS3130NT1GOSTR ND NTGS3130NT1GOSTRND NTGS3130NT1GOSTR |