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NTHS2101PT1G

MOSFET -8V -7.5A P-Channel

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SeekIC No. : 00163382 Detail

NTHS2101PT1G: MOSFET -8V -7.5A P-Channel

NTHS2101PT1G Data Sheet

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Part Number:
NTHS2101PT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 8 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 5.4 A
Resistance Drain-Source RDS (on) : 25 mOhms at 4.5 V Configuration : Single Hex Drain
Mounting Style : SMD/SMT Package / Case : Chip FET
Packaging : Reel    

Description

Maximum Operating Temperature :
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : 8 V
Configuration : Single Hex Drain
Package / Case : Chip FET
Continuous Drain Current : 5.4 A
Resistance Drain-Source RDS (on) : 25 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTHS2101PT1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25° C5.4A
Rds On (Max) @ Id, Vgs25 mOhm @ 5.4A, 4.5V
Input Capacitance (Ciss) @ Vds 2400pF @ 6.4V
Power - Max1.3W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs30nC @ 4.5V
Package / Case8-ChipFET?
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTHS2101PT1G
NTHS2101PT1G
NTHS2101PT1GOSTR ND
NTHS2101PT1GOSTRND
NTHS2101PT1GOSTR



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