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NTHS4101PT1G

MOSFET -20V -6.7A P-Channel

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SeekIC No. : 00147565 Detail

NTHS4101PT1G: MOSFET -20V -6.7A P-Channel

NTHS4101PT1G Data Sheet

floor Price/Ceiling Price

US $ .21~.41 / Piece | Get Latest Price
Part Number:
NTHS4101PT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.41
  • $.33
  • $.26
  • $.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 4.8 A
Resistance Drain-Source RDS (on) : 34 mOhms at 4.5 V Configuration : Single Hex Drain
Mounting Style : SMD/SMT Package / Case : Chip FET
Packaging : Reel    

Description

Maximum Operating Temperature :
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 4.8 A
Configuration : Single Hex Drain
Package / Case : Chip FET
Resistance Drain-Source RDS (on) : 34 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTHS4101PT1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C4.8A
Rds On (Max) @ Id, Vgs34 mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) @ Vds 2100pF @ 16V
Power - Max1.3W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs35nC @ 4.5V
Package / Case8-ChipFET?
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTHS4101PT1G
NTHS4101PT1G
NTHS4101PT1GOSTR ND
NTHS4101PT1GOSTRND
NTHS4101PT1GOSTR



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