MOSFET -20V -6.7A P-Channel
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 20 V |
| Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 4.8 A |
| Resistance Drain-Source RDS (on) : | 34 mOhms at 4.5 V | Configuration : | Single Hex Drain |
| Mounting Style : | SMD/SMT | Package / Case : | Chip FET |
| Packaging : | Reel |
| Technical/Catalog Information | NTHS4101PT1G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 4.8A |
| Rds On (Max) @ Id, Vgs | 34 mOhm @ 4.8A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 2100pF @ 16V |
| Power - Max | 1.3W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 35nC @ 4.5V |
| Package / Case | 8-ChipFET? |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NTHS4101PT1G NTHS4101PT1G NTHS4101PT1GOSTR ND NTHS4101PT1GOSTRND NTHS4101PT1GOSTR |