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NTHS5441T1

MOSFET -20V -5.3A P-Channel

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SeekIC No. : 00164855 Detail

NTHS5441T1: MOSFET -20V -5.3A P-Channel

NTHS5441T1 Data Sheet

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Part Number:
NTHS5441T1
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 3.9 A
Resistance Drain-Source RDS (on) : 46 mOhms (Typ) at 4.5 V Configuration : Single Hex Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : Chip FET Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Hex Drain
Continuous Drain Current : 3.9 A
Package / Case : Chip FET
Resistance Drain-Source RDS (on) : 46 mOhms (Typ) at 4.5 V


Parameters:

Technical/Catalog InformationNTHS5441T1
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3.9A
Rds On (Max) @ Id, Vgs46 mOhm @ 3.9A, 4.5V
Input Capacitance (Ciss) @ Vds 710pF @ 5V
Power - Max1.3W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs22nC @ 4.5V
Package / Case8-ChipFET?
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTHS5441T1
NTHS5441T1
NTHS5441T1OS ND
NTHS5441T1OSND
NTHS5441T1OS



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