NTJD1155LT1G, US $ .1-.21 , ON Semiconductor, NTJD1155LT1G DataSheet download, circuit diagram from SeekIC.com

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NTJD1155LT1G: MOSFET 8V +/-1.3A P-Channel w/Level Shift

NTJD1155LT1G Data Sheet

US $ .1~.21 / Piece | Get Latest Price

Part Number:: NTJD1155LT1G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Recent History
What is this?

NTJD1155LT1 evaluate
MOSFET 8V +/-1.3A P-Channel
NTJD2152PT1 evaluate
MOSFET 8V Dual P-Channel
NTJD2152PT1G evaluate
MOSFET 8V Dual P-Channel ESD Protection

Product Details

Quick Details

Transistor Polarity :	N and P-Channel	Drain-Source Breakdown Voltage :	8 V at P Channel
Gate-Source Breakdown Voltage :	1 V	Continuous Drain Current :	+/- 1.3 A
Resistance Drain-Source RDS (on) :	320 mOhms at P Channel	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SC-88	Packaging :	Reel

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Package / Case : SC-88
Gate-Source Breakdown Voltage : 1 V
Drain-Source Breakdown Voltage : 8 V at P Channel
Continuous Drain Current : +/- 1.3 A
Resistance Drain-Source RDS (on) : 320 mOhms at P Channel

Parameters:

Technical/Catalog Information	NTJD1155LT1G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25° C	1.3A
Rds On (Max) @ Id, Vgs	175 mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) @ Vds	-
Power - Max	400mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	-
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTJD1155LT1G NTJD1155LT1G NTJD1155LT1GOSCT ND NTJD1155LT1GOSCTND NTJD1155LT1GOSCT

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NTJD1155LT1G

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