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NTJS3151P

Features: • Leading Trench Technology for Low R DS(ON) Extending Battery Life• SC−88 Small Outline (2x2 mm, SC70−6 Equivalent)• Gate Diodes for ESD Protection• Pb−Free Package is Available Application• High Side Load Switch• Cell Phones, Compu...

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NTJS3151P: Features: • Leading Trench Technology for Low R DS(ON) Extending Battery Life• SC−88 Small Outline (2x2 mm, SC70−6 Equivalent)• Gate Diodes for ESD Protection• Pb...

NTJS3151P Data Sheet

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Part Number:
NTJS3151P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• Leading Trench Technology for Low R DS(ON) Extending Battery Life
• SC−88 Small Outline (2x2 mm, SC70−6 Equivalent)
• Gate Diodes for ESD Protection
• Pb−Free Package is Available

 




Application

• High Side Load Switch
• Cell Phones, Computing, Digital Cameras, MP3s and PDAs


Specifications

Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
-12
V
Gate−to−Source Voltage
VGS
±12
V
Continuous Drain
Current (Note 1)
Steady
State
TJ = 25°C
TJ = 85°C
ID
−2.7
A
−2.0
t 5 s
TJ = 25°C
−3.3
Power Dissipation
(Note 1)
Steady
State
PD
0.625
W
Pulsed Drain Current
tp = 10 s
IDM
−8.0
A
Operating Junction and Storage Temperature
TJ , TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
-0.8
A
Lead Temperature for Soldering Purposes
(1/8" from case for 10 s)
TL
260
°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.




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