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NTLGD3502NT1G

MOSFET NFET DFN 20V 4.6A 3X3mm 60M

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SeekIC No. : 00161328 Detail

NTLGD3502NT1G: MOSFET NFET DFN 20V 4.6A 3X3mm 60M

NTLGD3502NT1G Data Sheet

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Part Number:
NTLGD3502NT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.3 A
Resistance Drain-Source RDS (on) : 60 mOhms at 4.5 V Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DFN Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Continuous Drain Current : 4.3 A
Resistance Drain-Source RDS (on) : 60 mOhms at 4.5 V
Package / Case : DFN


Parameters:

Technical/Catalog InformationNTLGD3502NT1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C4.3A, 3.6A
Rds On (Max) @ Id, Vgs60 mOhm @ 4.3A, 4.5V
Input Capacitance (Ciss) @ Vds 480pF @ 10V
Power - Max1.74W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs4nC @ 4.5V
Package / Case6-DFN
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTLGD3502NT1G
NTLGD3502NT1G
NTLGD3502NT1GOSTR ND
NTLGD3502NT1GOSTRND
NTLGD3502NT1GOSTR



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