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NTLJD3119CTBG

MOSFET COMP 2X2 20V 3.8A 100mOhm

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SeekIC No. : 00149702 Detail

NTLJD3119CTBG: MOSFET COMP 2X2 20V 3.8A 100mOhm

NTLJD3119CTBG Data Sheet

floor Price/Ceiling Price

US $ .25~.41 / Piece | Get Latest Price
Part Number:
NTLJD3119CTBG
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.41
  • $.34
  • $.29
  • $.25
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 3.8 A at N Channel, 3.3 A at P Channel
Resistance Drain-Source RDS (on) : 65 mOhms at 4.5 V at N Channel, 100 mOhms at 4.5 V at P Channel Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : WDFN Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Transistor Polarity : N and P-Channel
Package / Case : WDFN
Continuous Drain Current : 3.8 A at N Channel, 3.3 A at P Channel
Resistance Drain-Source RDS (on) : 65 mOhms at 4.5 V at N Channel, 100 mOhms at 4.5 V at P Channel


Parameters:

Technical/Catalog InformationNTLJD3119CTBG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2.6A, 2.3A
Rds On (Max) @ Id, Vgs65 mOhm @ 3.8A, 4.5V
Input Capacitance (Ciss) @ Vds 271pF @ 10V
Power - Max710mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs3.7nC @ 4.5V
Package / Case6-WDFN
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTLJD3119CTBG
NTLJD3119CTBG
NTLJD3119CTBGOSTR ND
NTLJD3119CTBGOSTRND
NTLJD3119CTBGOSTR



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