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NTLJF3118N Maximum Ratings

Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 20 V
Gate−to−Source Voltage VGS ±12 V
Continuous Drain Current
(Note 1)		 Steady
State		 TA = 25°C ID 3.8 A
TA = 85°C 2.8
t 5 s TA = 25°C 4.6
Power Dissipation
(Note 1)		 Steady
State		 TA = 25°C PD 1.5 W
t 5 s 2.2
Continuous Drain Current
(Note 2)		 Steady
State		 TA = 25°C ID 2.6 A
TA = 85°C 1.9
Power Dissipation
(Note 2)		 TA = 25°C PD 0.7
Pulsed Drain Current tp = 10 s IDM 18 A
Operating Junction and Storage Temperature TJ,
TSTG		 −55 to 150 °C
Source Current (Body Diode) IS 1.8 A
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)		 TL 260 °C


Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 2 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size.

NTLJF3118N Features

• WDFN 2x2 mm Package Provides Exposed Drain Pad for Excellent Thermal Conduction
• Footprint Same as SC−88 Package
• 1.8 V VGS Rated RDS(on)
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• Low VF 2 A Schottky Diode
• This is a Pb−Free Device

NTLJF3118N Typical Application

• DC−DC Boost/Buck Converter
• Low Voltage Hard Disk DC Power Source

NTLJF3118N Connection Diagram

NTLJF3118N Connection Diagram

NTLJF3118N datasheet

NTLJF3118NTAG
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