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Part Number: NTLJF4156N

 

 

 

 

 

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NTLJF4156N Maximum Ratings

Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±8.0
V
Continuous Drain
Current (Note 1)
Steady
State
TJ = 25°C
ID
3.0
A
TJ = 85°C
2.4
t 5 s
TJ = 25°C
4.0
Power Dissipation
(Note 1)
Steady
State
PD
1.21
W
t 5 s
2.08
Continuous Drain
Current (Note 2)
Steady
State
TJ = 25°C
ID
2.0
A
TJ = 85°C
1.4
Power Dissipation
(Note 2)
TJ = 25°C
PD
0.44
A
Pulsed Drain Current
tp = 10 s
IDM
17
A
Operating Junction and Storage Temperature
TJ , TSTG
−55 to
150
°C
Source Current (Body Diode) (Note 2)
IS
2.4
A
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
TL
260
°C

Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size.

NTLJF4156N Features

• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• Better Thermal Resistance than TSOP−6 Package
• R DS(on) Rated at Low V GS(on) Levels, VGS = 1.5 V
• Low VF Schottky
• This is a Pb−Free Device

NTLJF4156N Typical Application

• DC−DC Converters
• Li−Ion Battery Applications in Cell Phones, PDA's, Media Players
• Color Display and Camera Flash Regulators

NTLJF4156N datasheet

NTLJF4156N
PDF/DataSheet Download

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