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NTLJS1102PTBG

MOSFET PFET WDFN6 8V 8.1A 36mOhm

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SeekIC No. : 00161351 Detail

NTLJS1102PTBG: MOSFET PFET WDFN6 8V 8.1A 36mOhm

NTLJS1102PTBG Data Sheet

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Part Number:
NTLJS1102PTBG
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 8 V
Gate-Source Breakdown Voltage : +/- 6 V Continuous Drain Current : 8.1 A
Resistance Drain-Source RDS (on) : 36 mOhms at 4.5 V Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : WDFN Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 8 V
Configuration : Single Quad Drain
Continuous Drain Current : 8.1 A
Gate-Source Breakdown Voltage : +/- 6 V
Package / Case : WDFN
Resistance Drain-Source RDS (on) : 36 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTLJS1102PTBG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25° C3.7A
Rds On (Max) @ Id, Vgs36 mOhm @ 6.2A, 4.5V
Input Capacitance (Ciss) @ Vds 1585pF @ 4V
Power - Max700mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs25nC @ 4.5V
Package / Case6-WDFN
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTLJS1102PTBG
NTLJS1102PTBG



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