NTMD3N08LR2

MOSFET 80V 2.3A N-Channel

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SeekIC No. : 00165187 Detail

NTMD3N08LR2: MOSFET 80V 2.3A N-Channel

floor Price/Ceiling Price

Part Number:
NTMD3N08LR2
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/15

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 2.3 A
Resistance Drain-Source RDS (on) : 21.5 mOhms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Gate-Source Breakdown Voltage : +/- 15 V
Configuration : Dual Dual Drain
Drain-Source Breakdown Voltage : 80 V
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 2.3 A
Resistance Drain-Source RDS (on) : 21.5 mOhms


Parameters:

Technical/Catalog InformationNTMD3N08LR2
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25° C2.3A
Rds On (Max) @ Id, Vgs215 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds 480pF @ 25V
Power - Max3.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs15nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTMD3N08LR2
NTMD3N08LR2
NTMD3N08LR2OS ND
NTMD3N08LR2OSND
NTMD3N08LR2OS



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