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NTMD4102PR2

Features: • Leading -20 V Trench for Low R DS(on)• SO-8 Package Provides Excellent Thermal Performance• Surface Mount SO-8 Package Saves Board Space• Pb Free Package for Green ManufacturingApplication• Load/Power Management• Battery Switching for Multi Cell Li-I...

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SeekIC No. : 004436681 Detail

NTMD4102PR2: Features: • Leading -20 V Trench for Low R DS(on)• SO-8 Package Provides Excellent Thermal Performance• Surface Mount SO-8 Package Saves Board Space• Pb Free Package for Gree...

NTMD4102PR2 Data Sheet

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Part Number:
NTMD4102PR2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Leading -20 V Trench for Low R DS(on)
• SO-8 Package Provides Excellent Thermal Performance
• Surface Mount SO-8 Package Saves Board Space
• Pb Free Package for Green Manufacturing


Application

• Load/Power Management
• Battery Switching for Multi Cell Li-Ion
• Buck-Boost Synchronous Rectification


Pinout

Connection Diagram


Specifications

Rating
Symbol
Value
Unit
Drain−to−Source Voltage
V DSS
-20
V
Gate-to-Source Voltage
V GS

±20
V
Drain Current
- Continuous @ TA = 25°C (Note 1)
- Pulsed Drain Current (t = 10 s)

I D
IDM
-6.5
-30
A
Steady State Power Dissipation
@ TA = 25°C (Note 1)
PD
1.1
W
Operating and Storage Temperature Range
T J, Tstg
−55 to
150
°C
Thermal Resistance,
− Junction−to−Case
− Junction−to−Ambient (Note 1)
IS
-0.9
A
Lead Temperature for Soldering Purposes
(1/8, from case for 10 seconds)
TL
260
°C
1. Surface-mounted on FR4 board using 1, sq pad size (Cu area = 1.127 in sq [1 oz] including traces)


Description

This P-Channel device NTMD4102PR2 was designed using ON Semiconductor's leading edge trench technology for low R DS(on) performance in the SO-8 dual package for high power and current handling capability. The low R DS(on) performance of NTMD4102PR2 is particularly suited for game systems, notebook and desktop computers, and printers.




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