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NTMD4N03R2

MOSFET 30V 4A N-Channel

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SeekIC No. : 00165761 Detail

NTMD4N03R2: MOSFET 30V 4A N-Channel

NTMD4N03R2 Data Sheet

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Part Number:
NTMD4N03R2
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 60 mOhms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 60 mOhms
Continuous Drain Current : 4 A


Parameters:

Technical/Catalog InformationNTMD4N03R2
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs60 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 400pF @ 20V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs16nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTMD4N03R2
NTMD4N03R2
NTMD4N03R2OS ND
NTMD4N03R2OSND
NTMD4N03R2OS



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