NTMD6N03R2

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 6 A
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.024 Ohms


Features:

• Designed for use in low voltage, high speed switching applications
• Ultra Low On−Resistance Provides
Higher Efficiency and Extends Battery Life
− RDS(on) = 0.024
, VGS = 10 V (Typ)
− RDS(on) = 0.030
, VGS = 4.5 V (Typ)
• Miniature SO−8 Surface Mount Package Saves Board Space
• Diode is Characterized for Use in Bridge Circuits
• Diode Exhibits High Speed, with Soft Recovery


Application

• Dc−Dc Converters
• Computers
• Printers
• Cellular and Cordless Phones
• Disk Drives and Tape Drives


Pinout




Specifications

Rating	Symbol	Value	Unit
Drain−to−Source Voltage Gate−to−Source Voltage − Continuous	VDSS VGS	−30 ±20	Vdc Vdc
Drain Current − Continuous @ TA = 25°C − Single Pulse (tp 3 10 s)	ID IDM	6.0 30	Adc Apk
Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2)	PD	2.0 1.29	Watts
Operating and Storage Temperature Range	TJ, Tstg	−55 to +150	°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, Peak IL = 9.0 Apk, L = 10 mH, RG = 25 )	EAS	325	mJ
Thermal Resistance − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2)	RJA	62.5 97	°C/W
Maximum Lead Temperature for Soldering Purposes for 10 seconds	TL	260	°C