NTMS10P02R2G

MOSFET 20V 10A P-Channel

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SeekIC No. : 00147119 Detail

NTMS10P02R2G: MOSFET 20V 10A P-Channel

floor Price/Ceiling Price

US $ .54~.98 / Piece | Get Latest Price
Part Number:
NTMS10P02R2G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.98
  • $.76
  • $.65
  • $.54
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 14 mOhms at 4.5 V Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 10 A
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 14 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTMS10P02R2G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs14 mOhm @ 10A, 4.5V
Input Capacitance (Ciss) @ Vds 3640pF @ 16V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs70nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTMS10P02R2G
NTMS10P02R2G
NTMS10P02R2GOSTR ND
NTMS10P02R2GOSTRND
NTMS10P02R2GOSTR



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