Position: Home  > All Categories> Integrated Circuits (ICs) > NTP125N02R

NTP125N02R

MOSFET 24V 125A N-Channel

product image

NTP125N02R Picture
See larger image
SeekIC No. : 00166753 Detail

NTP125N02R: MOSFET 24V 125A N-Channel

NTP125N02R Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
NTP125N02R
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 24 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 18.6 A
Resistance Drain-Source RDS (on) : 4.6 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 4.6 mOhms
Drain-Source Breakdown Voltage : 24 V
Continuous Drain Current : 18.6 A


Features:

• Planar HD3e Process for Fast Switching Performance
• Body Diode for Low trr and Qrr and Optimized for Synchronous Operation
• Low Ciss to Minimize Driver Loss
• Optimized Qgd and RDS(on) for Shoot−through Protection
• Low Gate Charge


Specifications

 Parameter  Symbol  Value  Unit
 Drain−to−Source Voltage  VDSS  24  Vdc
 Gate−to−Source Voltage − Continuous  VGS  ±20  Vdc
 Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25
Drain Current −
Continuous @ TC = 25, Chip
Continuous @ TC = 25, Limited by Package
Continuous @ TA = 25, Limited by Wires
Single Pulse (tp = 10 s)		  RJC
PD
ID
ID
ID
ID		  1.1
113.6
125
120.5
95
250		  /W
W
A
A
A
A
 Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25
Drain Current − Continuous @ TA = 25		  RJA
PD
ID		  46
2.72
18.6		  /W
W
A
 Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25
Drain Current − Continuous @ TA = 25		  RJA
PD
ID		  63
1.98
15.9		  /W
W
A
 Operating and Storage Temperature Range  TJ, Tstg  −55 to
150		  
 Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25
(VDD = 50 Vdc, VGS = 10 Vdc, IL = 15.5 Apk,
L = 1 mH, RG = 25 )		  EAS  120  mJ
 Maximum Lead Temperature for Soldering
Purposes, 1/8, from Case for 10 Seconds		  TL  260  



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Tapes, Adhesives
803
AC452-2
Resistors
A101G
3006P-1-205LF
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
View more