NTP27N06

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 27 A
Resistance Drain-Source RDS (on) : 46 mOhms


Features:

• Higher Current Rating
• Lower RDS(on)
• Lower VDS(on)
• Lower Capacitances


Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits


Specifications

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	VDSS	60	Vdc
Drain−to−Gate Voltage (RGS = 10 m)	VDGR	60	Vdc
Gate−to−Source Voltage − Continuous − Non−Repetitive (tp 10 ms)	VGS VGS	±20 ±30	Vdc
Drain Current − Continuous @ TC = 25°C − Continuous @ TC = 100°C − Single Pulse (tp 10 s)	ID ID IDM	27 15 80	Adc Apk
Total Power Dissipation @ TA = 25°C Derate above 25°C	PD	88.2 0.59	W/°C
Operating and Storage Temperature Range	TJ, Tstg	−55 to +175	°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, ,L = 0.3 mH, IL(pk) = 27 A, VDS = 60 Vdc)	EAS	109	mJ
Thermal Resistance − Junction−to−Case	RJC	1.7	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds	TL	260	°C

Description

 NTP27N06 Designed for low voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits.


Parameters:

Technical/Catalog Information	NTP27N06
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	27A
Rds On (Max) @ Id, Vgs	46 mOhm @ 13.5A, 10V
Input Capacitance (Ciss) @ Vds	1015pF @ 25V
Power - Max	88.2W
Packaging	Tube
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTP27N06 NTP27N06 NTP27N06OS ND NTP27N06OSND NTP27N06OS